Image courtesy of MOSFET Bootstrapping video (4:10)īut, a 12-volt input signal to the gate will not sustain current across the load. In the image below, an N-channel device is proposed as a high side gate driver. In order to use an N-channel MOSFET as a high side driver, a Bootstrap diode is necessary. The problem here is that N-channel MOSFETs have superior RDS(ON)s as compared to P-channel devices. In a previous article on the EICEDrivers, we illustrated a P-channel high side driver. The gate drivers both feature a propagation delay of 90ns with a maximum of 10ns delay matching. Maximum supply voltage is 25 volts, and the units are compatible with 3, 5 and 15 volt input logic. They offer UVLO for both channels and Schmitt trigger inputs with hysteresis. They feature operating voltages of up to +650 volts and negative VS transient immunity of 100 volts. The newest EICEDrivers are designed to drive MOSFETs and IGBTs. The units are based on the company’s silicon-on-insulator technology, with each transistor isolated by buried silicon dioxide, preventing parasitic latch over all temperature and voltage conditions. The 2ED2110S06M and the 2ED210XS06F are the newest members of Infineon’s EICEDriver family.
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